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Brand Name:VBE
Model Number:VBE36015E2
Place of Origin:CHINA
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...LDMOS (Dual), Common Source 50V 40mA 108MHz 28dB 1400W SOT539A 1. 1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band. 1. 2 Features and benefits Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with of 20 %: Output power = 1400 W Power...
...LDMOS (Dual), Common Source 50V 40mA 108MHz 28dB 1400W SOT539A 1. 1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band. 1. 2 Features and benefits Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with of 20 %: Output power = 1400 W Power... more
Brand Name:NXP/AMPLEON
Model Number:BLF178XR,112
Place of Origin:USA
BLF178XR 28dB Mosfet Power Transistor 50V 40mA 108MHz Frequency
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...power transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035-E boasts the excellent gain, linearity and reliability of ST's latest LDMOS...
...power transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035-E boasts the excellent gain, linearity and reliability of ST's latest LDMOS... more
Brand Name:Texas Instruments
Model Number:PD85035S-E
Place of Origin:Malaysia
PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS
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AD9364BBCZ RF Power Transistor High Performing Reliable Power Solutions Product Name: AD9364BBCZ RF Power Transistors Description: The AD9364BBCZ RF power transistor is a high-power class AB transistor designed for use in commercial, industrial and ...
AD9364BBCZ RF Power Transistor High Performing Reliable Power Solutions Product Name: AD9364BBCZ RF Power Transistors Description: The AD9364BBCZ RF power transistor is a high-power class AB transistor designed for use in commercial, industrial and ... more
Brand Name:Analog Devices Inc.
Model Number:AD9364BBCZ
Place of Origin:Multi-origin
AD9364BBCZ RF Power Transistors 200W High Performing Reliable Power Solutions
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...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available N Channel Mos Field Effect Transistor Applications Switching Application Power...
...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available N Channel Mos Field Effect Transistor Applications Switching Application Power... more
Brand Name:Hua Xuan Yang
Model Number:G045P03LQ1C2
Place of Origin:ShenZhen China
N Channel Mos Field Effect Transistor , High Power Transistor -30V/-80A
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... POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor High Voltage Single Mosfet Power Transistor ...
... POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor High Voltage Single Mosfet Power Transistor ... more
Brand Name:original
Model Number:SIHB22N60E-E3
Place of Origin:Original Manufacturer
Single High Voltage Mosfet Power Transistor DC SIHB22N60E-E3 ROHS
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IGBT Power Transistor SGL160N60UFD 600V 160A 250W UFD Series Gate Bipolar Transistors Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.The UFD series is designed for applications...
IGBT Power Transistor SGL160N60UFD 600V 160A 250W UFD Series Gate Bipolar Transistors Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.The UFD series is designed for applications... more
Brand Name:onsemi
Model Number:SGL160N60UFD
Place of Origin:Original Factory
UFD Series IGBT Power Transistor SGL160N60UFD 600V 160A 250W
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...Power Transistor for Your Electronic Projects Unleash the Power of FQPF18N60C - Ideal for High Voltage and High Current Applications Looking for a power transistor that can handle high voltage and high current applications? Look no further than the FQPF18N60C. This powerful and reliable transistor...
...Power Transistor for Your Electronic Projects Unleash the Power of FQPF18N60C - Ideal for High Voltage and High Current Applications Looking for a power transistor that can handle high voltage and high current applications? Look no further than the FQPF18N60C. This powerful and reliable transistor... more
Brand Name:Original
Model Number:FQPF18N60C
Part no.:FQPF18N60C
MOSFET Power Transistor IC Chip 18A 600V FQPF18N60C Ultimate
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...Power Transistor Triode TIP137 Product Paramenters Manufacturer: Standard Packaging: Tube Product Category: MOSFET Brand: standard RoHS: Details Configuration: Single Technology: Si Fall Time: 77 ns Mounting Style: Through Hole Height: 16.3 mm Package / Case: TO-220-3 Length: 10.67 mm Transistor...
...Power Transistor Triode TIP137 Product Paramenters Manufacturer: Standard Packaging: Tube Product Category: MOSFET Brand: standard RoHS: Details Configuration: Single Technology: Si Fall Time: 77 ns Mounting Style: Through Hole Height: 16.3 mm Package / Case: TO-220-3 Length: 10.67 mm Transistor... more
Brand Name:Diode Triode Transistor
Model Number:TIP137
Place of Origin:USA
TIP137 Triode Bipolar Power Transistor NPN 100V 6A TO-220-3 Package
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Vishay Discrete RF Power Transistor Trans MOSFET SI7615ADN-T1-GE3 Product Specifications:SI7615ADN.pdf SI7615ADN-T1-GE3 Specifications Part Status Active ...
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...Power Transistor Lead Forming Machine Usage: This machine is used to form/bend power transistor, including TO-92, TO-126, TO-3P, TO-220, etc Specifications: Voltage:220V AC60Hz/50Hz 90W Size:L360 *W380*H430(unit mm) Weight:32.5KGkg Efficiency:4800-5400pcs/H Product Description Features: 1.Mainly for bulk power transistors, transistors...
...Power Transistor Lead Forming Machine Usage: This machine is used to form/bend power transistor, including TO-92, TO-126, TO-3P, TO-220, etc Specifications: Voltage:220V AC60Hz/50Hz 90W Size:L360 *W380*H430(unit mm) Weight:32.5KGkg Efficiency:4800-5400pcs/H Product Description Features: 1.Mainly for bulk power transistors, transistors... more
Brand Name:HONREAL
Model Number:SC-101E
Place of Origin:China
220V SMT Related Machines , SC-101E Power Transistor Lead Forming Machine
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...Power Transistor IPA80R1K4CE Field Effect Transistor Description CoolMOS™ CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combines safety with performance and ruggedness to allow stable designs at highest efficiency level. CoolMOS™ 800V CE comes with selected package choice offering the benefit of reduced system costs and higher power...
...Power Transistor IPA80R1K4CE Field Effect Transistor Description CoolMOS™ CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combines safety with performance and ruggedness to allow stable designs at highest efficiency level. CoolMOS™ 800V CE comes with selected package choice offering the benefit of reduced system costs and higher power... more
Brand Name:Julun
Model Number:PG-TO 220
Place of Origin:CHINA
800V CoolMOSTM CE Power Transistor IPA80R1K4CE Field Effect Transistor
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... is designed to support applications with high frequency up to 60KHz, and offers a current density of 400A/c㎡. High Power IGBT is an ideal choice for use in a wide range of applications requiring high speed switching and high power. Technical Parameters:
... is designed to support applications with high frequency up to 60KHz, and offers a current density of 400A/c㎡. High Power IGBT is an ideal choice for use in a wide range of applications requiring high speed switching and high power. Technical Parameters: more
Brand Name:REASUNOS
Place of Origin:Guangdong, CN
Price:Confirm price based on product
Multifunctional Power Transistor And IGBT High Voltage 1200V 40A
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650V Transistors IMW65R030M1H N-Channel SiC Trench Power Transistors TO-247-3 Product Description Of IMW65R030M1H IMW65R030M1H is 650V CoolSiC M1 SiC Trench Power Device, it is built over the solid silicon carbide technology. Specification Of ...
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Black Insulated Gate Bipolar Transistor Normal Temperature Product Description: An Insulated Gate Bipolar Transistor (IGBT) is a new and versatile electronic device with insulated gate, designed for use in general purpose applications. This device is ...
Black Insulated Gate Bipolar Transistor Normal Temperature Product Description: An Insulated Gate Bipolar Transistor (IGBT) is a new and versatile electronic device with insulated gate, designed for use in general purpose applications. This device is ... more
Brand Name:MMR
Place of Origin:China
Mounting Type:Through Hole
Bipolar IGBT Power Transistor Through Hole
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IXYK110N120A4 IGBT PT 1200 V 375 A 1360 W Through Hole TO-264 (IXYK) IXYS Trench 650V to 1200V XPT™ GenX4™ IGBTs IXYS Trench 650V to 1200V XPT™ GenX4™ IGBTs are developed using a proprietary XPT thin-wafer technology and a state-of-the-art 4th generation (...
IXYK110N120A4 IGBT PT 1200 V 375 A 1360 W Through Hole TO-264 (IXYK) IXYS Trench 650V to 1200V XPT™ GenX4™ IGBTs IXYS Trench 650V to 1200V XPT™ GenX4™ IGBTs are developed using a proprietary XPT thin-wafer technology and a state-of-the-art 4th generation (... more
Brand Name:IXYS
Model Number:IXYK110N120A4
Minimum Order Quantity:50pcs
IXYK110N120A4 IGBT Power Transistor 1200V 375A 1360W Through Hole TO-264
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51199930-100 51199930100 Honeywell Power Transistor Devices ⇒ Click here for good price 51199930-100 Brand/Manufacturer Honeywell /USA Part Number 51199930-100 Alternate Part Number ...
51199930-100 51199930100 Honeywell Power Transistor Devices ⇒ Click here for good price 51199930-100 Brand/Manufacturer Honeywell /USA Part Number 51199930-100 Alternate Part Number ... more
Brand Name:HONEYWELL
Model Number:51199930-100
Place of Origin:USA
51199930-100 51199930100 Honeywell Power Transistor Devices
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In Stock Electronic Component IC Chips XC226796F80LACKXUMA1 SAK-XC2267-96F80L AC We Just offer NEW & ORIGINAL items , should any of these items be of interest to you, please let us know. we are pleased to quote you our best price . Thank you ! electronic ...
In Stock Electronic Component IC Chips XC226796F80LACKXUMA1 SAK-XC2267-96F80L AC We Just offer NEW & ORIGINAL items , should any of these items be of interest to you, please let us know. we are pleased to quote you our best price . Thank you ! electronic ... more
Brand Name:INFEINEON
Model Number:SAK-XC2267-96F80L AC
Place of Origin:Original Brand
BOM Mosfet Power Transistor XC226796F80LACKXUMA1 SAK-XC2267-96F80L AC
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... 6A TO-220 Power Transistor MOSFET Transistors for Switch Circuit TIP41C TIP42C Description The TIP41C is a base island technology NPN power transistor in TO-220 plastic package that make this device suitable for audio, power linear and switching ...
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... TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Pb−Free Packages are Available •