-
...Mosfet Power Transistor For Inverter Systems Management What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle high-level powers. The power MOSFET’s are constructed in a V configuration. Therefore, it is also called as V-MOSFET, VFET. The symbols of N- channel & P- channel power MOSFET are shown in the below figure. Mosfet Power
...Mosfet Power Transistor For Inverter Systems Management What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle high-level powers. The power MOSFET’s are constructed in a V configuration. Therefore, it is also called as V-MOSFET, VFET. The symbols of N- channel & P- channel power MOSFET are shown in the below figure. Mosfet Power more
Brand Name:Hua Xuan Yang
Model Number:4306W-A
Place of Origin:ShenZhen China
-
...MOSFET POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor High Voltage Single Mosfet Power Transistor SIHB22N60E - E3 600V 21A Package D2PAK MSL 1 SINGLE N-CHANNEL MOSFETS...
...MOSFET POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor High Voltage Single Mosfet Power Transistor SIHB22N60E - E3 600V 21A Package D2PAK MSL 1 SINGLE N-CHANNEL MOSFETS... more
Brand Name:original
Model Number:SIHB22N60E-E3
Place of Origin:Original Manufacturer
Single High Voltage Mosfet Power Transistor DC SIHB22N60E-E3 ROHS
-
...MOSFET Power Transistor High Power High Efficiency Low On Resistance Parameters: - Drain Source Voltage (VDS): 600V - Drain Current (ID): 24A - Gate Source Voltage (VGS): ±20V - Power Dissipation (PD): 150W - RDS(ON): 0.077Ω - Maximum Junction Temperature (Tj): 150°C - Transistor...
...MOSFET Power Transistor High Power High Efficiency Low On Resistance Parameters: - Drain Source Voltage (VDS): 600V - Drain Current (ID): 24A - Gate Source Voltage (VGS): ±20V - Power Dissipation (PD): 150W - RDS(ON): 0.077Ω - Maximum Junction Temperature (Tj): 150°C - Transistor... more
Brand Name:Infineon Technologies
Model Number:SPW24N60C3
Place of Origin:original
SPW24N60C3 MOSFET Power Transistor High Power High Efficiency Low On Resistance
-
... designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of
-
... MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive ...
-
...Mosfet Power Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs...
...Mosfet Power Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs... more
Brand Name:Infineon
Model Number:IRF5210PBF
Place of Origin:Original Factory
P Channel DIP Mosfet Power Transistor 100V 40A 200W TO-220 IRF5210PBF Lead Free
-
...Power Transistor for Your Electronic Projects Unleash the Power of FQPF18N60C - Ideal for High Voltage and High Current Applications Looking for a power transistor that can handle high voltage and high current applications? Look no further than the FQPF18N60C. This powerful and reliable transistor...
...Power Transistor for Your Electronic Projects Unleash the Power of FQPF18N60C - Ideal for High Voltage and High Current Applications Looking for a power transistor that can handle high voltage and high current applications? Look no further than the FQPF18N60C. This powerful and reliable transistor... more
Brand Name:Original
Model Number:FQPF18N60C
Part no.:FQPF18N60C
MOSFET Power Transistor IC Chip 18A 600V FQPF18N60C Ultimate
-
200V 30A MOSFET Power Transistor IC Chips TO247 IRFP250MPBF #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;...
-
In Stock Electronic Component IC Chips XC226796F80LACKXUMA1 SAK-XC2267-96F80L AC We Just offer NEW & ORIGINAL items , should any of these items be of interest to you, please let us know. we are pleased to quote you our best price . Thank you ! electronic ...
In Stock Electronic Component IC Chips XC226796F80LACKXUMA1 SAK-XC2267-96F80L AC We Just offer NEW & ORIGINAL items , should any of these items be of interest to you, please let us know. we are pleased to quote you our best price . Thank you ! electronic ... more
Brand Name:INFEINEON
Model Number:SAK-XC2267-96F80L AC
Place of Origin:Original Brand
BOM Mosfet Power Transistor XC226796F80LACKXUMA1 SAK-XC2267-96F80L AC
-
...Mosfet Power Transistor For Inverter Systems Management What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle high-level powers. The power MOSFET’s are constructed in a V configuration. Therefore, it is also called as V-MOSFET, VFET. The symbols of N- channel & P- channel power MOSFET are shown in the below figure. Mosfet Power
...Mosfet Power Transistor For Inverter Systems Management What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle high-level powers. The power MOSFET’s are constructed in a V configuration. Therefore, it is also called as V-MOSFET, VFET. The symbols of N- channel & P- channel power MOSFET are shown in the below figure. Mosfet Power more
Brand Name:Hua Xuan Yang
Model Number:4306W-A
Place of Origin:ShenZhen China
Low Gate Charge Mosfet Power Transistor For Inverter Systems Management
-
... • Superior commutation ruggedness • Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) Benefits • Improves system efficiency • Improves power density •
-
...Power Transistor Triode TIP137 Product Paramenters Manufacturer: Standard Packaging: Tube Product Category: MOSFET Brand: standard RoHS: Details Configuration: Single Technology: Si Fall Time: 77 ns Mounting Style: Through Hole Height: 16.3 mm Package / Case: TO-220-3 Length: 10.67 mm Transistor Polarity: N-Channel Product Type: MOSFET...
...Power Transistor Triode TIP137 Product Paramenters Manufacturer: Standard Packaging: Tube Product Category: MOSFET Brand: standard RoHS: Details Configuration: Single Technology: Si Fall Time: 77 ns Mounting Style: Through Hole Height: 16.3 mm Package / Case: TO-220-3 Length: 10.67 mm Transistor Polarity: N-Channel Product Type: MOSFET... more
Brand Name:Diode Triode Transistor
Model Number:TIP137
Place of Origin:USA
TIP137 Triode Bipolar Power Transistor NPN 100V 6A TO-220-3 Package
-
...MOSFET NPN Transistor PNP SOT-23(SOT-23-3) LP2301BLT1G Products Description: 1.MOS (Field Effect Transistor)/LP2301BLT1G Diodes and Rectifiers 2.the material of product compliance withRoHS requirements and Halogen Free 3.S- prefix for automotive and other applications requiringunique site and control change requirements; AEC-Q101qualified and PPAP capable 4.RDS(ON),VGS@-2.5V,IDS@-2.0A=150mΩ 5.RDS(ON),VGS@-4.5V,IDS@-2.8A=110mΩ 6.Power
...MOSFET NPN Transistor PNP SOT-23(SOT-23-3) LP2301BLT1G Products Description: 1.MOS (Field Effect Transistor)/LP2301BLT1G Diodes and Rectifiers 2.the material of product compliance withRoHS requirements and Halogen Free 3.S- prefix for automotive and other applications requiringunique site and control change requirements; AEC-Q101qualified and PPAP capable 4.RDS(ON),VGS@-2.5V,IDS@-2.0A=150mΩ 5.RDS(ON),VGS@-4.5V,IDS@-2.8A=110mΩ 6.Power more
Brand Name:original
Model Number:LP2301BLT1G
Minimum Order Quantity:discussible
MOSFET NPN Transistor IC Chip SOT-23 SOT-23-3 LP2301BLT1G
-
...Transistor (SiC MOSFETs) are an advanced type of power device, with high efficiency and excellent performance. SiC MOSFETs feature low on-resistance and high power capabilities, enabling reliable operation and superior switching performance. Based on the national military standard production line, the process is stable and the quality is reliable. The use of SiC MOSFETs
...Transistor (SiC MOSFETs) are an advanced type of power device, with high efficiency and excellent performance. SiC MOSFETs feature low on-resistance and high power capabilities, enabling reliable operation and superior switching performance. Based on the national military standard production line, the process is stable and the quality is reliable. The use of SiC MOSFETs more
Brand Name:REASUNOS
Place of Origin:Guangdong, CN
Minimum Order Quantity:600
Industrial 1200V SiC Power Transistors , Stable High Voltage N Channel Mosfet
-
PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates...
PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates... more
Brand Name:Texas Instruments
Model Number:PD85035S-E
Place of Origin:Malaysia
PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS
-
...Mosfet Array Transistors Product Description Of MSCSM120HM31CTBL2NG MSCSM120HM31CTBL2NG device is a full bridge 1200 V/79 A silicon carbide (SiC) MOSFET power module. Specification Of MSCSM120HM31CTBL2NG Part Number MSCSM120HM31CTBL2NG Input Capacitance (Ciss) (Max) @ Vds 3020pF @ 1000V Power...
...Mosfet Array Transistors Product Description Of MSCSM120HM31CTBL2NG MSCSM120HM31CTBL2NG device is a full bridge 1200 V/79 A silicon carbide (SiC) MOSFET power module. Specification Of MSCSM120HM31CTBL2NG Part Number MSCSM120HM31CTBL2NG Input Capacitance (Ciss) (Max) @ Vds 3020pF @ 1000V Power... more
Brand Name:Original Factory
Model Number:MSCSM120HM31CTBL2NG
Place of Origin:CN
MSCSM120HM31CTBL2NG Automotive IGBT Modules N-Channel Mosfet Array Transistors
-
...Power Transistor IPA80R1K4CE Field Effect Transistor Description CoolMOS™ CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combines safety with performance and ruggedness to allow stable designs at highest efficiency level. CoolMOS™ 800V CE comes with selected package choice offering the benefit of reduced system costs and higher power...
...Power Transistor IPA80R1K4CE Field Effect Transistor Description CoolMOS™ CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combines safety with performance and ruggedness to allow stable designs at highest efficiency level. CoolMOS™ 800V CE comes with selected package choice offering the benefit of reduced system costs and higher power... more
Brand Name:Julun
Model Number:PG-TO 220
Place of Origin:CHINA
800V CoolMOSTM CE Power Transistor IPA80R1K4CE Field Effect Transistor
-
Complementary Silicon Power Transistors Mosfet Semiconductor MJ15025G PNP − MJ15023, MJ15025* Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear ...
Complementary Silicon Power Transistors Mosfet Semiconductor MJ15025G PNP − MJ15023, MJ15025* Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear ... more
Brand Name:ONSEMI
Model Number:MJ15025G
Place of Origin:Mexico
Complementary Silicon Power Transistors Mosfet Semiconductor MJ15025G
-
INFINEON Chip IRLML6401TRPBF MOSFET P-CH 12V 4.3A SOT23 Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-...
INFINEON Chip IRLML6401TRPBF MOSFET P-CH 12V 4.3A SOT23 Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-... more
Brand Name:INFINEON
Model Number:IRLML6401TRPBF
Certification:ISO9001
INFINEON Mosfet Power IC Chip IRLML6401TRPBF P-CH 12V 4.3A SOT23
-
...Power IC Chip, which is a 650V, 30A MOSFET N, is an excellent choice for applications that require excellent performance even in extreme conditions. With its operating temperature range of -55℃ ~ +150℃ and storage temperature range of -55℃ ~ +150℃, the Power IC Chip is suitable for a wide variety of applications. Besides, it features a chip type of power IC and frequency of 50Hz, 60Hz, etc. The Power
...Power IC Chip, which is a 650V, 30A MOSFET N, is an excellent choice for applications that require excellent performance even in extreme conditions. With its operating temperature range of -55℃ ~ +150℃ and storage temperature range of -55℃ ~ +150℃, the Power IC Chip is suitable for a wide variety of applications. Besides, it features a chip type of power IC and frequency of 50Hz, 60Hz, etc. The Power more
Brand Name:Toshiba
Model Number:TK100E10N1,S1X(S
Place of Origin:JAPAN
Toshiba TK100E10N1,S1X(S N-channel MOSFET power ic chip Toshiba MOSFET 100V N-CHAN PWR FET