InP DFB Epiwafer wavelength 1390nm InP substrate 2 4 6 inch for 2.5~25G DFB laser diode InP DFB Epiwafer InP substrate's brief InP DFB Epiwafers designed for 1390nm wavelength applications are critical components used in high-speed optical communication systems, particularly for 2.5 Gbps to 25 Gbps DFB (Distributed Feedback) laser diodes. These wafers are grown on Indium Phosphide (InP) substrates...

InP FP epiwafer InP substrate n/p type 2 3 4 inch with thickeness of 350-650um for optical net work InP epiwafer's Overview Indium Phosphide (InP) Epiwafer is a key material used in advanced optoelectronic devices, particularly Fabry-Perot (FP) laser diodes. InP Epiwafers consist of epitaxially grown layers on an InP substrate, designed for high-performance applications in telecommunications, data centers, and sensing technologies. InP...

...InP Substrate With Low Etch Pit Density(EPD) , 3”, Prime Grade PAM-XIAMEN provides single crystal InP(Indium phosphide) wafer for micro-electronic ( HBT/ HEMT ) and opto-electronic industry ( LED / DWDM / PIN / VCSELs ) in diameter up to 6 inch. Indium phosphide ( InP ) crystal is formed by two elements , Indium and Phosphide , growth by Liquid Encapsulated Czochralski ( LEC ) method or VGF method . InP...

InP Based Epi Wafer We provides MBE / MOCVD epitaxial growth of custom structure on InP substrate for microelectronics , optoelectronics and RF Microwave applications , in diameter Ø 2" to Ø 4” . With our extensive MOCVD experience , we can grow binary alloy ( InP ) or ternary alloy ( InGaAs , InAlAs , InGaAsP ) on InP substrate...