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...Channel 75 V 130A (Tc) 330W (Tc) Through Hole TO-220AB RF Transistors Manufacturer: Infineon Product Category: MOSFETs RoHS: - REACH - SVHC: - Technology: Si Mounting Style: Through Hole Package / Case: TO-220-3 Transistor Polarity: N-Channel Number of ...
...Channel 75 V 130A (Tc) 330W (Tc) Through Hole TO-220AB RF Transistors Manufacturer: Infineon Product Category: MOSFETs RoHS: - REACH - SVHC: - Technology: Si Mounting Style: Through Hole Package / Case: TO-220-3 Transistor Polarity: N-Channel Number of ... more
Description:IRF1407PBF N-Channel 75 V 130A (Tc) 330W (Tc) Through Hole TO-220AB RF Transistors
Stock:500pcs
Minimum Order Quantity:1pcs
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...RF Power Transistor - High Power High Reliability The AD9361BBCZ is a high-power, high-efficiency N-channel RF power transistor designed for use in the 900 MHz ISM band. The device features a wide gate voltage range and excellent thermal stability. It is ideal for applications such as RF...
...RF Power Transistor - High Power High Reliability The AD9361BBCZ is a high-power, high-efficiency N-channel RF power transistor designed for use in the 900 MHz ISM band. The device features a wide gate voltage range and excellent thermal stability. It is ideal for applications such as RF... more
Brand Name:Analog Devices Inc.
Model Number:AD9361BBCZ
Place of Origin:Multi-origin
AD9361BBCZ High Power Rf Transistor
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12 Bands Waterproof Convoy Vehicle Bomb Jammer Full Band Frequency RF Cell Phone Signal Jammer Product description : This device is not only bomb jammers, but also high power portable DDS convoy jamming system,portable RF jammer,portable vehicle bomb ...
12 Bands Waterproof Convoy Vehicle Bomb Jammer Full Band Frequency RF Cell Phone Signal Jammer Product description : This device is not only bomb jammers, but also high power portable DDS convoy jamming system,portable RF jammer,portable vehicle bomb ... more
Brand Name:Wolvesteam
Model Number:WT700260
Place of Origin:USA
VSWR Protector 330W RF IED Bomb Jammer 12 Bands VCO Synthesized
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..., high gain, and high-speed performance in compact packages. Key Features: Type: NPN RF Transistor Transition Frequency (ft): 25 GHz Noise Figure (NF): 0.75 dB at 2 GHz Gain (Gmax): 21 dB at 1.8 ...
..., high gain, and high-speed performance in compact packages. Key Features: Type: NPN RF Transistor Transition Frequency (ft): 25 GHz Noise Figure (NF): 0.75 dB at 2 GHz Gain (Gmax): 21 dB at 1.8 ... more
Description:BFP420H6327XTSA1 BFP420 Overview Parametrics Documents Order Design Support Packaging Support NPN Silicon RF Transist
Stock:100000
Type:NPN RF Transistor
BFP420H6327XTSA1 Infineon NPN Silicon RF Transistor
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FLM0910-25F RF Power Transistor X-Band Internally Matched FET DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally matchedfor standard communication bands to ...
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... to RoHS 2002/95/EC and WEEE 2002/96/EC Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies.
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Wireless Communication Module QPD0007 Single-Path 5GHz 20W 48V GaN RF Transistor [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% ...
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Stock Offer (Hot Sell) Part no. Quantity Brand D/C Package EPM3128ATC100-10N 3000 ALTERA 16+ TQFP-100 HFA08TB60PBF 3000 VISHAY 16+ TO-220 HT7533-1 3000 HOLTEK 13+ SOT89 HT9170B 3000 HOLTEK 15+ DIP18 IMP811T 3000 IMP 16+ SOT143 IRF840PBF 3000 VISHAY 16+ ...
Stock Offer (Hot Sell) Part no. Quantity Brand D/C Package EPM3128ATC100-10N 3000 ALTERA 16+ TQFP-100 HFA08TB60PBF 3000 VISHAY 16+ TO-220 HT7533-1 3000 HOLTEK 13+ SOT89 HT9170B 3000 HOLTEK 15+ DIP18 IMP811T 3000 IMP 16+ SOT143 IRF840PBF 3000 VISHAY 16+ ... more
Brand Name:Anterwell
Model Number:BFR91A
Place of Origin:original factory
BFR91A Power Mosfet Transistor Silicon NPN Planar RF Transistor
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TXtelsig YP242434 Wifi RF Amplifier 2.4GHz 802.11b/g/n WLAN Power Amplifier The YP242434 is a high-power, high- linearity power amplifier based on the highly-reliable InGaP/GaAs HBT technology. It can be easily configured for high-power, high- linearity ...
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SD1480 N/A Electronic Components IC MCU Microcontroller Integrated Circuits SD1480 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:...
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Product Category: Rectifiers Mounting Style: Through Hole Package / Case: TO-220-3 Vr - Reverse Voltage: 400 V If - Forward Current: 6 A Type: Fast Recovery Rectifiers Configuration: Single Max Surge Current: 60 A Ir - Reverse Current: 20 uA Recovery Time...
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IRGP4063DPBF IGW50N60H3 IGP50N60T IKD06N60RA Insulated Gate Bipolar Transistor Applications •uninterruptible power supplies •welding converters •converters with high switching frequency Specifications Product Attribute Attribute Value Package / Case: TO-...
IRGP4063DPBF IGW50N60H3 IGP50N60T IKD06N60RA Insulated Gate Bipolar Transistor Applications •uninterruptible power supplies •welding converters •converters with high switching frequency Specifications Product Attribute Attribute Value Package / Case: TO-... more
Brand Name:Infineon
Model Number:IRGP4063DPBF
Place of Origin:Original
600V 96A 330W IGBT Power Transistor IRGP4063DPBF For Welding Converters
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...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF...
...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF... more
Brand Name:NXP
Model Number:BFS505
Place of Origin:CHINA
BFS505 15V RF Power Transistor , 18mA 9GHz 150mW Surface Mount Transistor
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STP180N55F3 Specifications Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On,Min Rds On) - Vgs(th) (Max) @ Id 4V @ 250µA ...
STP180N55F3 Specifications Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On,Min Rds On) - Vgs(th) (Max) @ Id 4V @ 250µA ... more
Place of Origin:Original
Part Number:STP180N55F3
Manufacturer:STMicroelectronics
STP180N55F3 Field Effect Transistor Transistors FETs MOSFETs Single
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...) 96A Current - Collector Pulsed (Icm) 144A Vce(on) (Max) @ Vge, Ic 2.14V @ 15V, 48A Power - Max 330W Switching Energy 625µJ (on), 1.28mJ (off) Input Type Standard Gate Charge 95nC Td (on
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MRF374A is a RF POWER FIELD EFFECT TRANSISTOR. Part NO: MRF374A Brand: FSL Date Code: 286+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ...
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...RF POWER MOSFET TRANSISTORS M68702H FOR FM MOBILE RADIO Condition: 100% Brand New Product Part Status: Active Package: H2 Lead Free Status / RoHS Status: Compliant Output Power: 60W Voltage: 12.5V High Light: n channel mosfet transistor , n channel transistor M68702H 150-175MHz, 12.5V, 60W, RF Power module transistor...
...RF POWER MOSFET TRANSISTORS M68702H FOR FM MOBILE RADIO Condition: 100% Brand New Product Part Status: Active Package: H2 Lead Free Status / RoHS Status: Compliant Output Power: 60W Voltage: 12.5V High Light: n channel mosfet transistor , n channel transistor M68702H 150-175MHz, 12.5V, 60W, RF Power module transistor... more
Brand Name:original
Model Number:M68702H
Place of Origin:Original Manufacturer
150mhz - 175mhz RF Power Mosfet Transistors M68702h For Fm Mobile Radio