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TIP112 Field Effect Transistor , High Frequency Transistor

Categories Semiconductor Triode
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
MOQ: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day
Model Number: TIP112
Product ID: TIP112
Feature: Low Collector Emitter Saturation Voltage
Collector Power Dissipation: 2w
Junction Temperature: 150℃
Collector-Base Voltage: 100v
Emitter-Base Voltage: 5v
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TIP112 Field Effect Transistor , High Frequency Transistor

TO-220-3L Plastic-Encapsulate Transistors TIP112 DARLINGTON TRANSISTOR (NPN)


FEATURE
  • High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.)
  • Low Collector-Emitter Saturation Voltage
  • Industrial Use

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


SymbolParameterValueUnit
VCBOCollector-Base Voltage100V
VCEOCollector-Emitter Voltage100V
VEBOEmitter-Base Voltage5V
ICCollector Current -Continuous2A
PCCollector Power Dissipation2W
TJJunction Temperature150
TstgStorage Temperature-55 to +150

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)


ParameterSymbolTest conditionsMinTypMaxUnit
Collector-base breakdown voltageV(BR)CBOIC=10mA,IE=0100V
Collector-emitter breakdown voltageV(BR)CEOIC=30mA,IB=0(SUS)100V
Emitter-base breakdown voltageV(BR)EBOIE=10mA,IC=05V
Collector cut-off currentICEOVCE=50V,IB=02mA
Collector cut-off currentICBOVCB=100V,IE=01mA
Emitter cut-off currentIEBOVEB=5V,IC=02mA

DC current gain

hFE(1)VCE=4V,IC=1A100012000
hFE(2)VCE=4V,IC=2A500
Collector-emitter saturation voltageVCE(sat)IC=2A,IB=8mA2.5V
Base-emitter voltageVBEVCE=4V,IC=2A2.8V
Collector output capacitanceCobVCB=10V,IE=0,f=0.1MHz100pF

TO-220-3L Package Outline Dimensions


SymbolDimensions In MillimetersDimensions In Inches
MinMaxMinMax
A4.4704.6700.1760.184
A12.5202.8200.0990.111
b0.7100.9100.0280.036
b11.1701.3700.0460.054
c0.3100.5300.0120.021
c11.1701.3700.0460.054
D10.01010.3100.3940.406
E8.5008.9000.3350.350
E112.06012.4600.4750.491
e2.540 TYP0.100 TYP
e14.9805.1800.1960.204
F2.5902.8900.1020.114
h0.0000.3000.0000.012
L13.40013.8000.5280.543
L13.5603.9600.1400.156
Φ3.7353.9350.1470.155

TO-220-3L Plastic-Encapsulate Transistors TIP42/42A/42B/42C TRANSISTOR (PNP)



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