C2334 2SC2334 Bipolar (BJT) Transistor NPN 100V 7A 1.5W Through Hole TO220 Transistor Original and New
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Product Description Product Detail Part Status Obsolete Transistor Type NPN Current - Collector (Ic) (Max) 7A Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 600mV @ 500mA, 5A Current - Collector Cutoff (Max) 10µA DC Current ......
Shenzhen Quanyuantong Electronics Co., Ltd.
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SPA04N60C3 npn darlington power transistor Power Mosfet Transistor Cool MOS™ Power Transistor
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...Transistor VDS @ Tjmax 650 V RDS(on) 0.95 Ω ID 4.5 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) P-TO220-3-31 P-TO263-3-2 P-TO220......
Anterwell Technology Ltd.
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RS-901K Radial Transistor TO220 126 Lead Bending Trimming Machine
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... Transistor TO220 126 Lead Bending Trimming Machine Intro: RS-901K is an automatic radial lead forming machine, cutting and forming can be finished at same time. It is suitable for big quantity radia lead forming. Save labor. It can work for transistors, ......
RKENS TECHNOLOGY CO.,LTD
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IPP65R110CFDA Diode Transistor And Thyristor N-Channel 650 V 31.2A Tc 277.8W Tc PG-TO220-3
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IPP65R110CFDA N-Channel 650 V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO220-3 Features: Category Single FETs, MOSFETs Mfr Infineon Technologies Series Automotive, AEC-Q101, CoolMOS Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) ......
Shenzhen Zhaocun Electronics Co., Ltd.
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2SC1971 C1971 TO220 Epitaxial Planar NPN Transistor For RF Power Amplifiers
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2SC1971 C1971 TO220 NPN epitaxial planar type transistor designed for RF power amplifiers Description: silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. List Of Other Electronic Components......
Shenzhen Koben Electronics Co., Ltd.
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SPA04N60C3XKSA1 npn darliCM GROUPon power transistor Power Mosfet Transistor Cool MOS™ Power Transistor
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...Transistor VDS @ Tjmax 650 V RDS(on) 0.95 Ω ID 4.5 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) P-TO220-3-31 P-TO263-3-2 P-TO220......
ChongMing Group (HK) Int'l Co., Ltd
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High Gain Performance Mosfet Power Transistor NPN Darlington TIP122 ROHS Approved
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...Transistors TIP122 Darlington NPN 100V 5A 2000mW TO220 Power Transistor TIP120, TIP121, TIP122 TIP125, TIP126, TIP127 Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors......
Shenzhen ATFU Electronics Technology ltd
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TIP137 Triode Bipolar Power Transistor NPN 100V 6A TO-220-3 Package
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...TO220 Power Transistor Triode TIP137 Product Paramenters Manufacturer: Standard Packaging: Tube Product Category: MOSFET Brand: standard RoHS: Details Configuration: Single Technology: Si Fall Time: 77 ns Mounting Style: Through Hole Height: 16.3 mm Package / Case: TO-220-3 Length: 10.67 mm Transistor......
ShenZhen QingFengYuan Technology Co.,Ltd.
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BTS282Z E3230 TO220-7 N-Channel MOSFET 49V 80A Transistors FETs
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...TO220-7 N-Channel MOSFET 49V 80A Transistors FETs BTS282ZE3230AKSA2 power MOSFET from Infineon Technologies. Its maximum power dissipation is 300000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor......
Angel Technology Electronics Co
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BTS282Z E3230 TO220-7 N Channel MOSFET 49V 80A Transistors FETs
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...'t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -40 °C to 175 °C. This N...
Guangzhou Topfast Technology Co., Ltd.
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