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...TAS Solid Tantalum Capacitors The CDE Cornell Dubilier Type TAS solid tantalum axial lead capacitor features a hermetically sealed metal case with a polyester insulator wrap, offering high capacitance, low DC leakage, and low dissipation factor. It is temperature and frequency stable, moisture and solvent resistant, and available in miniature sizes with a long shelf life. Ideal for harsh and industrial applications, the TAS...
...TAS Solid Tantalum Capacitors The CDE Cornell Dubilier Type TAS solid tantalum axial lead capacitor features a hermetically sealed metal case with a polyester insulator wrap, offering high capacitance, low DC leakage, and low dissipation factor. It is temperature and frequency stable, moisture and solvent resistant, and available in miniature sizes with a long shelf life. Ideal for harsh and industrial applications, the TAS... more
Model Number:TAS157K015P1G-F
Capacitance:150uF
Voltage Rating:15V
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...Ta) 500mW (Ta) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 25mOhm @ 7A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V Vgs (Max) ±20V Input Capacitance...
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...Ta) 370mW (Ta) Surface Mount SOT-23-3 Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Motor Control Power Management Functions Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance...
...Ta) 370mW (Ta) Surface Mount SOT-23-3 Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Motor Control Power Management Functions Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance... more
Brand Name:Diodes Incorporated
Model Number:2N7002-7-F
Place of Origin:USA
2N7002-7-F N-Channel 60 V 115mA (Ta) 370mW (Ta) Surface Mount SOT-23-3
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...Capacitance Features: Suitable for precise photometric determination from ultraviolet to red band Product features High UV sensitivity: QE = 75% (λ=200 nm) Low capacitance Measurement condition Ta=25 ℃, Typ., Unless otherwise noted, Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Rise time: VR=0 V, Terminal capacitance...
...Capacitance Features: Suitable for precise photometric determination from ultraviolet to red band Product features High UV sensitivity: QE = 75% (λ=200 nm) Low capacitance Measurement condition Ta=25 ℃, Typ., Unless otherwise noted, Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Rise time: VR=0 V, Terminal capacitance... more
Brand Name:Hamamatsu
Model Number:S1337-1010BQ
Place of Origin:Japan
S1337-1010BQ Silicon Photodiode For Precision Photometry From UV To IR Low Capacitance
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...) (Max) @ Id 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 785pF @ 100V FET Feature -
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...Ta) 260mW (Ta) Surface Mount SC-70 Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Motor Control Power Management Functions Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance...
...Ta) 260mW (Ta) Surface Mount SC-70 Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Motor Control Power Management Functions Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance... more
Model Number:2N7002PW
Place of Origin:Malaysia
2N7002PW Surface Mount NPN PNP Transistors N Channel 60V 310mA ( Ta ) 260mW
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...Ta) 260mW (Ta) Surface Mount SC-70 Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Motor Control Power Management Functions Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance...
...Ta) 260mW (Ta) Surface Mount SC-70 Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Motor Control Power Management Functions Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance... more
Brand Name:NXP
Model Number:2N7002PW
Place of Origin:Malaysia
2N7002PW Surface Mount NPN PNP Transistors N Channel 60V 310mA ( Ta ) 260mW
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...Ta) 60W (Tc) Surface Mount ATPAK Features:ATP114-TL-H Category Single FETs, MOSFETs Mfr onsemi FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 55A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 16mOhm @ 28A, 10V Gate Charge (Qg) (Max) @ Vgs 92 nC @ 10 V Vgs (Max) ±20V Input Capacitance...
...Ta) 60W (Tc) Surface Mount ATPAK Features:ATP114-TL-H Category Single FETs, MOSFETs Mfr onsemi FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 55A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 16mOhm @ 28A, 10V Gate Charge (Qg) (Max) @ Vgs 92 nC @ 10 V Vgs (Max) ±20V Input Capacitance... more
Brand Name:onsemi
Model Number:ATP114-TL-H
Place of Origin:United States
ATP114-TL-H Diode Transistor P-Channel Mosfet 60 V 55A Ta 60W Tc Surface Mount ATPAK
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...) @ 25°C 13A (Ta), 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 7mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 20V
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....5 V, Current at 25°C - 11.9A continuous drain (Ta). Specification Of NTMFS4C05NT1G FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 11.9A (Ta) Input Capacitance (Ciss) (Max)
....5 V, Current at 25°C - 11.9A continuous drain (Ta). Specification Of NTMFS4C05NT1G FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 11.9A (Ta) Input Capacitance (Ciss) (Max) more
Brand Name:Original Factory
Model Number:NTMFS4C05NT1G
Place of Origin:CN
MOS Single N Channel Mosfet Transistor IC 14 NC NTMFS4C05NT1G DFN5
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...quality large capacitance electrolytic capacitor filtering, the machine static power consumption is low, dynamic energy is abundant. Quick Detail Model XL-550 TA 1KHz THD≤1% Stereo Power 8 OHMS 2×550W 4 OHMS 2×800W TA 1KHz THD≤1% Bridge Mono ...
...quality large capacitance electrolytic capacitor filtering, the machine static power consumption is low, dynamic energy is abundant. Quick Detail Model XL-550 TA 1KHz THD≤1% Stereo Power 8 OHMS 2×550W 4 OHMS 2×800W TA 1KHz THD≤1% Bridge Mono ... more
Brand Name:P-AMF
Model Number:XL550
Place of Origin:china
XL550 2 Channel Home Amplifier 2 Channel Black Balanced input In 2U
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...) (Max) @ Id 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 51pF @ 15V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 500mW (Ta) Rds On (Max) @ Id, Vgs 2.4 Ohm @
...) (Max) @ Id 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.3nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 51pF @ 15V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 500mW (Ta) Rds On (Max) @ Id, Vgs 2.4 Ohm @ more
Place of Origin:Original
Part Number:DMP32D4SFB-7B
Manufacturer:Diodes Incorporated
DMP32D4SFB-7B Field Effect Transistor Transistors FETs MOSFETs Single
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... hosts Supports power down/link down power saving Product Specifications Current - Continuous Drain (Id) @ 25°C 11.9A (Ta) Input Capacitance
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...) @ Id 3.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 62 nC @ 10 V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4810 pF @
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... • (VCC = 5 V, TA = 25°C. Typical values unless specified.) • Gain-Bandwidth Product 1 MHz • Low Supply Current 430 µA • Low Input Bias Current 45 nA • Wide Supply Voltage Range 3 V to 32 V • Stable With High Capacitive Loads • Single ...
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...MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Specifications ( ) : 2SA2040 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions
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ADS7843E Touchscreen 3 Wire Capacitive Resolution(Bits) 12 b Interface Serial VoltageReference External Voltage-Supply 2.7V ~ 5V Current-Supply 280 µA OperatingTemperature -40°C ~ 85°C (TA) MountingType Surface Mount Package/Case 16-SSOP (0.154, 3.90mm ...
ADS7843E Touchscreen 3 Wire Capacitive Resolution(Bits) 12 b Interface Serial VoltageReference External Voltage-Supply 2.7V ~ 5V Current-Supply 280 µA OperatingTemperature -40°C ~ 85°C (TA) MountingType Surface Mount Package/Case 16-SSOP (0.154, 3.90mm ... more
Brand Name:Burr Brown
Model Number:ADS7843E
Minimum Order Quantity:1PCS
ADS7843E